| PART |
Description |
Maker |
| BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
| PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAPLST2122-030CF |
LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V
|
M/A-COM Technology Solutions, Inc.
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|
| MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
| PTFB212503EL PTFB212503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFB211503EL PTFB211503FL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PFM21030 PFM21030F PFM21030SM |
2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers
ETC[ETC]
|
